Impact of Mg-Doped AlGaN Electron Blocking Layer on Micro-LEDs: A Comparative Analysis of Carrier Transport Versus Chip Size and Current Density
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
关键词
Current density,Light emitting diodes,Electrons,Wide band gap semiconductors,Aluminum gallium nitride,Doping,Physics,Radiative recombination,Performance evaluation,Distance measurement,Carrier transport,electron blocking layer (EBL),GaN micro-light emitting diodes (micro-LEDs),light output power density (LOPD),size effect
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