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Influence of High-K La2O3 Interfacial Oxide Layer on the Performance of GaN Based Schottky Barrier Ultraviolet-B and A Photodetection Sensors

Nallabala Nanda Kumar Reddy, Vamsidhar Reddy,S. Kaleemulla, Shivani Sharma,V. Manjunath,Suresh Kumar, G. Gopi Krishana,P. Rosaiah,N. Ravi,Venkata Krishnaiah Kummara,Sunil Singh Kushvaha,Vasudeva Reddy Minnam Reddy,Yusuf Siraj Usmani

OPTICAL MATERIALS（2025）

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Key words
Schottky diode,Ultraviolet photodetector,Responsivity,Detectivity and external quantum efficiency
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