A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 Dbm Psat and 24.3 % PAE in a 250-Nm InP HBT Technology
BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium（2024）
关键词
power amplifier,D-band,InP,millimeter-wave,stacked PA,common-base
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