Electrical-Thermal Coupling Modeling of SiC MOSFETs Based on Field-Circuit Coupling and Its Application in Junction Temperature Calculation During Surges
IEEE TRANSACTIONS ON POWER ELECTRONICS（2025）
关键词
Field-circuit coupling,junction temperature calculation,proper orthogonal decomposition (POD) algorithm,surge,silicon carbide metal-oxide-semiconductor-field-effect transistors (SiC MOSFETs)
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