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THE EFFECTIVENESS OF THE AlGaAs/GaAs/AlGaAs BUFFER LAYER SYSTEM IN REDUCING DEFECT DENSITY AND SUPPRESSING MUTUAL DIFFUSION DURING THE INTEGRATION OF GaAs WITH Ge/Si(001) USING EPITAXIAL METHODS

A.A. Sushkov, A.V. Rykov, N.V. Baidus, V.G. Shengurov, S.A. Denisov,V.Yu. Chalkov,D.V. Yurasov, D.A. Pavlov

Materials of the 27th All-Russian Youth Scientific Conference（2024）

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