Enhanced Photocurrent and Suppressed Dark Current of MXene/Ge Heterostructure-Based Near-Infrared Photodetectors Enabled by Surface Charge Transfer Induced Inversion Layer
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Key words
Surface treatment,Photodetectors,Substrates,Electrons,Detectors,Photoconductivity,Performance evaluation,Dark current,Junctions,Germanium,2-D material,heterostructure,inversion layer,near-infrared (NIR) photodetector,surface charge transfer doping
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