Experimental Comparison of HfO2/X-Based ReRAM Devices Switching Properties by the MIM Capacitance
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY（2024）
关键词
Capacitance,Electrodes,Voltage measurement,Hafnium oxide,Voltage,Dielectrics,Switches,Capacitance measurement,Frequency measurement,Pulse measurements,MIM,ReRAM,capacitance,oxygen vacancies,defects,H-plasma treatment
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