The Reliability and Noise Investigation of Boron Diffusion under Positive Bias Temperature Instability in 16 Nm Node High Voltage FinFETs
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Key words
Boron,Stress,FinFETs,Logic gates,Degradation,High-voltage techniques,Passivation,Hot carriers,Bonding,Threshold voltage,Boron diffusion,high-voltage FinFET (HV FinFET),low-frequency noise (LFN),positive bias temperature instability (PBTI)
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