Effect of Nitridation of Bottom Interlayer in FeFETs with the TiN/Al2O3/Hf0.5Zr0.5O2< /sub>/bottom Interlayer/Si Substrate Structure
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Key words
Charge trapping,ferroelectric field-effect transistor (FeFET),ferroelectric field-effect transistor (FeFET),interlayer,interlayer,memory window (MW),memory window (MW),nitridation,nitridation,nitridation
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