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Nitrogen Incorporated Interlayer for Enhanced Hf-Zr-O Ferroelectric Tunnel Junctions in Ternary-Content-Addressable-Memory

Jaekyeong Kim,Manh-Cuong Nguyen,An Hoang-Thuy Nguyen,Anh-Duy Nguyen,Hyunsoo Kim, Kyungsoo Hwang, Geon Park, Hoyeon Shin, Siun Song, Daewoong Kwon,Rino Choi

Extended Abstracts of the 2024 International Conference on Solid State Devices and Materials(2024)

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