Displacement Damage Effects on a CDTI-based CCD-on-CMOS: Dark Current and Charge Transfer Inefficiency

Antoine Salih Alj,Aubin Antonsanti,Alexandre Le Roch,Pierre Touron,François Roy,Arnaud Tournier,Stéphane Demiguel,Julien Michelot,Valérian Lalucaa,Cédric Virmontois,Pierre Magnan,Vincent Goiffon

IEEE Transactions on Nuclear Science（2024）

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关键词

Capacitive Deep Trench Isolation (CDTI),Charge Coupled Device (CCD),CMOS,Displacement Damage Dose (DDD),Defect clusters,Point defects,Dark current,Charge Transfer Inefficiency (CTI)

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