Load-Independent Junction Temperature Estimation Via Combined TSEPs Modeling for SiC MOSFETs
IEEE TRANSACTIONS ON POWER ELECTRONICS（2025）
关键词
Temperature measurement,Silicon carbide,MOSFET,Load modeling,Temperature sensors,Junctions,Temperature dependence,Logic gates,Voltage measurement,Threshold voltage,Condition monitoring,junction temperature,silicon carbide (SiC) mosfets,temperature-sensitive electrical parameters (TSEPs)
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