Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer
ADVANCED ELECTRONIC MATERIALS（2024）
关键词
depolarization field,ferroelectric tunnel junctions,Hf0.5Zr0.5O2,Interlayers,memristive behavior
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