SOI Lateral Hall Device with Deep Trench Fingers for High Sensitivity and Low Offset
IEEE ELECTRON DEVICE LETTERS(2024)
关键词
Electrodes,Magnetic field measurement,Silicon-on-insulator,Current measurement,Temperature measurement,Magnetic fields,Fingers,Hall sensor,lateral hall devices (LHD),silicon on insulator (SOI),bipolar-CMOS-DMOS (BCD),deep trench,short-circuit effect
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