Engineering HZO by Flat Amorphous TiN with 0.3nm Roughness Achieving Uniform C-Axis Alignment, Record High Breakdown Field (~10nm HZO), and Record Final 2pr of 56 Μc/cm2 with Endurance > 4E12
2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2024）
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