Ge-doped In2O3: First Demonstration of Utlizing Ge As Oxygen Vacancy Consumer to Break the Mobility/Reliability Tradeoff for High Performance Oxide TFTs

Jiayi Wang,Ziheng Bai,Kuo Zhang, Zhicheng Wu,Di Geng,Yang Xu,Nannan You,Yuxuan Li, Guanhua Yang,Ling Li,Shengkai Wang,Ming Liu

Symposium on VLSI Technology（2024）

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关键词

Oxide Thin-film Transistors,High Mobility,Secondary Ion Mass Spectrometry,Energy-dispersive X-ray Spectroscopy,X-ray Photoelectron Spectroscopy,Output Feature,Deep Trap,Bias Stress

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