Characteristics of Aluminum-based Oxide with ALD SiO2 Interfacial Layer As the Gate Dielectric of the Silicon Carbide (sic) MOS Capacitor with RTA Annealing
2024 IEEE SILICON NANOELECTRONICS WORKSHOP, SNW 2024（2024）
关键词
Interfacial Layer,Silicon Carbide,Gate Dielectric,Annealing Temperature,Interface States,Gate Stack,Field-effect Transistors,Power Devices
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