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3.7-Ghz Multi-Bank High-Current Single-Port Cache SRAM with Leakage Saving Circuits in 3-Nm FinFET for HPC Applications

IEEE JOURNAL OF SOLID-STATE CIRCUITS(2024)

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关键词
Cache family,FinFET,row decoder leakage saving (RDLS),static random-access memory (SRAM),write driver leakage saving,Cache family,FinFET,row decoder leakage saving (RDLS),static random-access memory (SRAM),write driver leakage saving
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