Design Space Exploration of FeRAM Bit Cell for DRAM Application

Hyungrock Oh,Yang Xiang,Fernando Garcia Redondo,Mohit Kumar Gupta,Manu Perumkunnil,Marie Garcia Bardon, Amit Dhiman, Sathisha Nanjunde Gowda,Amey Walke,Andrea Fantini,Farrukh Yasin,Gouri Sankar Kar,Geert Hellings,Wim Dehaene

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

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Key words

1T1C,2T1C,bitline parasitic capacitance (C-BL),dynamic random access memory (DRAM),ferroelectric capacitor (FeCAP) capacitance (C-FE),FeCAP,ferroelectric random access memories (FeRAMs),dynamic random access memory (DRAM),FeCAP,ferroelectric random access memories (FeRAMs)

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