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Epitaxial Growth Conditions and Interface Quality of InGaAs/GaAsP Multiple Quantum Wells

Jingfei Mu,Bin Wang,Yinli Zhou,Chao Chen,Yugang Zeng,Jianwei Zhang,Xing Zhang,Tianjiao Liu, Zhuo Zhang, Yingli Zhou,Yuehui Xu, Gaohui Yuan,Jiye Zhang,Yongqiang Ning,Lijun Wang

Materials Science in Semiconductor Processing（2024）

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Key words
InGaAs/GaAsP,Multiple quantum wells,Epitaxial growth,Growth temperature,V/III ratio,Growth rate,Interface quality
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