Benefits of Combining Gate-Field Plates Design and Hybrid Drains on Gold-Free GaN HEMT Devices

Yen-Shuo Chen, Yuwen Lai, Zhe- Yu Lin,Yi-Cheng Huang, Cheng- Tang Yu,Fu-Hsiang Ko,Chun-Chi Chen,Abdulrahman Al-Hagri,Hsin-Chiang You

2024 31st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)（2024）

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High Electron Mobility Transistors,Inductively Coupled Plasma,Gallium Nitride,Power Density,Surface States,Contact Resistance,Transconductance,Regional Quality,Insulated Gate Bipolar Transistor,Gate Leakage,Drain Bias,Gate Region

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