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High-Performance P-Gan/algan/gan HEMT-Based Ultraviolet Phototransistors with Fw-Level Weak Light Detection Capacity

IEEE Electron Device Letters(2024)

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关键词
Absorption,HEMTs,Photoconductivity,MODFETs,Lighting,Electric fields,Voltage,HEMT,phototransistor,UV-to-visible rejection ratio,weak light detection,detectivity
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