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Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) with Four Bits Per SOT Programming Line

William Hwang,Fen Xue,Ming-Yuan Song,Chen-Feng Hsu,T. C. Chen,Wilman Tsai,Xinyu Bao,Shan X. Wang

IEEE ELECTRON DEVICE LETTERS（2024）

Cited 0|Views5
Key words
Magnetoresistive random access memory,MRAM,spin-transfer torque,STT,spin-orbit torque,SOT,STT-assisted SOT,SAS,SAS-MRAM,field-free switching
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