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Analysis of the Gate Current’s Influence on the RF Power Performance of InAlN/GaN HEMTs

Dongping Xiao,Dominique M. M. -P. Schreurs,Rana ElKashlan, Yang Zhang,Adam Cooman,Ahmad Khaled, Daanish Smellie,AliReza Alian, Muhammad Asad,Bertrand Parvais,Piet Wambacq,Uthayasankaran Peralagu,Nadine Collaert

IEEE Transactions on Microwave Theory and Techniques（2024）

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Key words
Circuit analysis,gallium nitride,gate leakage,high-electron-mobility transistors (HEMTs),power amplifiers (PAs),semiconductor device modeling
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