Critical factors for enhancing electrical performance in LaGdO3 capacitor

This study investigates the characteristics of metal/LaGdO3/Si capacitors using LaGdO3 as the dielectric material. LaGdO3 thin films were deposited using radio-frequency magnetron sputtering, and the effects of different process parameters, such as annealing temperature, electrode materials, and oxygen ratio, on the capacitance characteristics were investigated. Results showed that the presence of oxygen vacancies affects the dielectric constant, flat-band voltage, and breakdown field of LaGdO3 films. The optimal annealing temperature for the LaGdO3/Si stack was identified to be 600 °C, resulting in a dielectric constant of 13.9 and a flat-band voltage shift of 0.1 V. Introducing 10 % O2 during deposition effectively repaired oxygen vacancies in the film, while excessively high oxygen proportions resulted in a lower dielectric constant and a higher flat-band voltage shift. Moreover, the electrode material was found to affect the capacitance characteristics. The dielectric constants for Al/LaGdO3/Si, Ti/LaGdO3/Si, and Pt/Ti/LaGdO3/Si capacitors were 10.0, 16.3, and 17.3, respectively. The flat-band voltage shifts were −0.7, −0.42, and −0.03 V, with hysteresis voltages of 345, 117, and 32 mV, respectively. The Pt/Ti/LaGdO3/Si device exhibited the lowest oxide defect density, indicating superior interface quality and potentially enhanced device performance. In addition, the band diagrams for metal/LaGdO3/Si were constructed. This study demonstrates that oxygen vacancies and electrode materials are crucial factors influencing the capacitance characteristics of LaGdO3 films. The electrical properties of LaGdO3 films can be effectively improved by controlling process parameters, enhancing their potential for applications in capacitors and other electronic devices.