Charge Trapping and Emission During Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers
MICROMACHINES(2024)
Key words
GaN on Si,Schottky gate HEMT,charge trapping,C-GaN back barrier
AI Read Science
Must-Reading Tree
Example

Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined