Oxygen Vacancy Engineering in Si-doped, HfO2 Ferroelectric Capacitors Using Ti Oxygen Scavenging LayersN. Barrett,W. Hamouda,C. Lubin,J. Laguerre,C. Carabasse,N. Vaxelaire,J. Coignus, S. Martin,L. GrenouilletApplied Physics Letters（2024）引用 0|浏览4AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
