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A Trench Beside Field Limiting Rings Terminal for Improved 4H-Sic Junction Barrier Schottky Diodes: Proposal and Investigation

Xiaofeng Ye, Huihuang Ke,Shubo Wei, Hongjin Weng, Xinwei Wang,Shen Yuong Wong,Weifeng Yang

Microelectronics reliability/Microelectronics and reliability(2024)

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Key words
4H-SiC,Junction barrier Schottky (JBS) diode,Trench,Field limiting ring (FLR),TCAD simulations
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