Modeling and Simulations of Semiconductor Structures at Highest Frequencies

To describe the charge transport in semiconductor topologies, the drift-diffusion model (DDM) and the hydrodynamic model (HDM) have been widely used. In this work, within the framework of DDM, a numerical solver has been realized, based on the continuous Galerkin finite element method (FEM). The analysis is conducted for a n ⁺ nn ⁺ structure, using a voltage source excitation. For verifying the obtained results, a commercialized software tool has been employed as a reference. This tool has been also used to simulate HDM for the studied structure. It is demonstrated that the DDM solvers agree closely. As a next step, an HDM solver is currently developed for revealing additional features of the above topology, invisible for DDM. This solver will incorporate both the continuous and discontinuous Galerkin FEM, for accuracy and efficiency comparisons.