In-Situ Extraction of Time-Resolved $e_{\text{oss}}$ on GaN Power Device Based on a Modified Hard Switching Platform
2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024（2024）
关键词
GaN power device,dynamic $E_{OSS}$,hard-switching,dynamic $R_{ON}$,FOM
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