Heat Dissipation Enhancement of High-Power Deep-Ultraviolet LEDs Through Plated Copper on Thick Film Diamond Substrates

Heat accumulation seriously affects the photothermal performances of high-power deep-ultraviolet light-emitting diodes (DUV LEDs). In this letter, plated copper on thick film (PCTF) diamond substrates were proposed to enhance the heat dissipation of high-power DUV LEDs. The thermal resistance of PCTF-diamond substrate is only 1.064 K/W, which is 53.6% lower than that of the PCTF-Al ₂ O ₃ substrate (2.293 K/W). The DUV LEDs packaged by PCTF-diamond substrates achieve excellent optical and thermal performances. Under a high current of 0.7 A, the light output power of DUV LEDs packaged by PCTF-diamond substrate reaches 180.4 mW, which is 20.3% higher than that of DUV LEDs packaged by PCTF-Al ₂ O ₃ substrates (150 mW). Meanwhile, the PCTF-diamond substrate enables a surface temperature of 158°C for DUV-LEDs, which is 43°C lower than the PCTF-Al ₂ O ₃ substrate (201°C). It is obvious that the PCTF-diamond substrate can effectively improve the photothermal performances of DUV LEDs, which is of great significance for heat dissipation in high-power devices.