Large-scale fabrication of high-quality PtSe2 film via magnetron sputtering for NIR detection

PtSe2 has received extensive research attention in infrared (IR) detection owing to its tunable bandgap, high carrier mobility and efficient optical absorption. However, traditional preparation methods are characterized by complicated growth conditions, lengthy processing times, limited Pt and Se source selectivity, subpar crystal quality, and challenges in large-scale fabrication, which impede their practical applications. Here, a convenient magnetron co-sputtering method was employed to fabricate large-area, high-quality PtSe2 films. The characterizations of the phase, microstructure, morphology and films grown at different temperatures reveal good crystallinity, controllability, homogeneity, flat surface morphology, narrow bandgap and excellent IR absorption of the PtSe2 films. Furthermore, we investigated the optimal substrates and growth temperatures. The PtSe2-based photodetectors show fast response time and reasonable responsivity. The short preparation time demonstrates the potential for large-scale applications of PtSe2 in next generation IR detection systems compatible with established Si technologies.