Three-dimensional/one-dimensional Perovskite Heterostructures for Stable Tri-State Synaptic Memristors

Memristors have great potential in neural network computation. Perovskite memristors exhibit excellent resistive-switching (RS) properties between high resistance state (HRS) and low resistance state (LRS) state under applied voltage due to the extraordinary ion migration and superior charge transfer. However, the stability issue of traditional three-dimensional (3D) perovskites is still challenging. Here, one-dimensional (1D) (CH3)3SPbI3 perovskite passivation layer was in-situ formed on 3D perovskite film, which was further applied in stable synaptic memristor. The memristor was provided with three resistance states due to the heterojunction electric field coupled with ion migration. The on/off ratio of memristors was obviously improved from 10 to over 60. The RS characteristics of 3D/1D perovskite memristor remained unchanged after 103 s read and 300 switching cycles. The 3D/1D perovskite memristor effectively exhibited versatile synaptic plasticity behaviors including long-term potentiation, long-term depression and paired-pulse facilitation by controlling the input voltages. Notably, the novel device provides a new candidate for next-generation neuromorphic computing.