Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

Nerijus Armakavicius,Philipp Kuhne,Alexis Papamichail,Hengfang Zhang,Sean Knight,Axel Persson,Vallery Stanishev,Jr-Tai Chen,Plamen Paskov,Mathias Schubert,Vanya Darakchieva

MATERIALS（2024）

Cited 0|Views3

Key words

electrical properties,free charge carriers,optical Hall effect,terahertz,group-III nitrides,gallium nitride,aluminum nitride,aluminum gallium nitride,high-electron-mobility transistor,HEMT

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined