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Operando Spectroscopic Investigation of the Valence Change Mechanism in La2NiO4+δ ‐based Memristive Devices

Thoai-Khanh Khuu,Aleksandra Koroleva,Carlos Moncasi,Alexander Stangl,David Cooper,Gauthier Lefevre,Fabrice Wilhelm,Andrei Rogalev,Matthieu Weber,Carmen Jimenez,Monica Burriel

ADVANCED ELECTRONIC MATERIALS（2024）

引用 2|浏览3
关键词
in-situ TEM,La2NiO4+delta,operando XANES,resistive switching mechanism,valence change memory
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