Modeling Gate Leakage Current for P-Gan Gate HEMTs with Engineered Doping Profile
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
关键词
Logic gates,HEMTs,MODFETs,Semiconductor process modeling,Wide band gap semiconductors,Aluminum gallium nitride,Leakage currents,Breakdown voltage,engineered gradient p-GaN doping,forward bias gate leakage current,gate leakage,junction voltage,p-GaN gate high-electron-mobility transistors (HEMTs),uniform p-GaN doping
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