Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate.
Sci. China Inf. Sci.(2024)
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined