Investigation of Saturated $\textit{r}_{\text{on}}$ on GaN Power HEMTs by a Re-Configurable Continuous Switching Platform
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
关键词
Switches,Logic gates,Temperature measurement,Circuits,Gallium nitride,Clamps,Stress,Dynamic R-ON,gallium nitride (GaN) power device,gate injection transistor (DIT),hard switching (HS),schottky-type pGaN,soft switching (SS)
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要