Электролюминесценция одиночных InGaN/GaN микропирамид

AbstractThe results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phase epitaxy. LED hetero structures based on single micropyramids demonstrate electroluminescence at a wavelength of 520–590 nm, which is shifted to the shortwave length region with increasing current pumping. These light-emission sources are of interest for the fabrication of high-intensity point light sources for biosensor applications.