Considerations on External Heat Transfer in Saturated Bipolar Junction Transistors
IEEE Journal of Emerging and Selected Topics in Power Electronics（2024）
Abstract
When the BJT is deeply saturated and a resistor (
R
) is connected between the base and collector, the overall bipole seen through the base and emitter exhibits rectifying properties. By appropriately sizing
R
, only a small fraction of the current flows into the base, while the majority passes through
R
, causing a voltage drop almost equal to that between the base and emitter. The same current flows through the collector and emitter, resulting in a voltage drop on the order of tens of millivolts. The novelty lies in the fact that almost all the power is dissipated in
R
rather than in the
BJT
. In the presence of large currents, this leads to significantly lower power dissipation in the
BJT
compared to a diode of the same size. The reduced thermal stress can extend the Mean Time Between Failures (MTBF) of the
BJT
. In this study, we conduct a model-based analysis of the saturated BJT rectifier, which is then validated through experimental setups. Furthermore, it is demonstrated that the power dissipated in a saturated
BJT
-based bridge rectifier is significantly lower than that measured in a classical bridge rectifier configuration under the same operating conditions.
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Key words
BJT heat transfer,BJT heating,BJT physical effect,BJT saturation
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