Ultrathin-Body GaN-on-Sapphire HEMT with Megahertz Switching Capability Under Prompt Irradiation Dose Rate Exceeding 1010 rad(Si)/s

Feng Zhou, Quanyou Chen, Can Zou, Weizong Xu,Fangfang Ren,Dong Zhou, Dunjun Chen, Youdou Zheng,Rong Zhang,Jiandong Ye,Hai Lu

IEEE Electron Device Letters(2024)

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