A Comparison of Total-Ionizing-Dose Effects in Silicon and Silicon-Nitride Waveguides
IEEE Transactions on Nuclear Science(2024)
Abstract
The total-ionizing-dose (TID) responses of silicon and low-loss silicon-nitride integrated waveguides are evaluated. Mach–Zehnder interferometers (MZIs), which allow for both TID-induced changes in effective refractive index (
neff
) and transmission losses to be observed, were exposed to 10-keV highly localized X-ray pulses facilitating very high dose irradiation for small exposure areas. TID-induced shifts in
neff
and transmission losses were observed for both waveguide types above 3 Mrad(Si), with the silicon waveguides exhibiting better radiation resilience for both metrics. Data collected was used to create Ansys-Lumerical simulations to propose potential mechanisms of TID-induced degradation in waveguides. Furthermore, to better understand the effects of
neff
degradation on other passive components, both silicon and silicon-nitride TID-damaged ring resonators were simulated in MATLAB. Differences in
neff
changes and transmission losses imply that for high dose environments (> 10 Mrad(Si)), when comparing waveguide types, silicon waveguides will provide similar loss performance and comparably smaller shifts in
neff
compared to typically lower-loss silicon-nitride waveguides.
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Key words
Total Ionizing Dose,Silicon Photonics,Radiation,X-ray,Waveguides,Silicon Nitride,Effective Refractive Index,Ansys-Lumerical,MATLAB,Mach-Zehnder Interferometer,Ring Resonator
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