Improved Dielectric Constant and Leakage Current of ZrO$_{\text{2}}$-Based Metal–Insulator– Metal Capacitors by Si Doping
IEEE Transactions on Electron Devices（2024）
关键词
Silicon,Doping,Leakage currents,Dielectric constant,Capacitors,Random access memory,Capacitance,Dielectric constant (k),dynamic random access memories (DRAM) capacitors,equivalent oxide thickness (EOT),leakage current,Si-doped ZrO2
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