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Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs

Valentin Ackermann,Blend Mohamad,Hala El Rammouz,Vishwajeet Maurya,Eric Frayssinet,Yvon Cordier,Matthew Charles,Gauthier Lefevre,Julien Buckley,Bassem Salem

Electronics（2024）

Cited 0|Views3
Key words
GaN,MOSFET,vertical device,resistance partitioning
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