Study on Enhancing ESD Reliability Through A Area Modulation of High-Voltage Nldmoss with the Drain Embedded STI
2024 10th International Conference on Applied System Innovation (ICASI)（2024）
Key words
Electrostatic discharge,Holding voltage,Laterally-diffused metal-oxide semiconductor,Latch-up Eeffect (LU),Shallow Trench Isolation (STI)
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