Additive engineering for Sb_2S_3 indoor photovoltaics with efficiency exceeding 17
arxiv(2024)
Abstract
Indoor photovoltaics (IPVs) have attracted increasing attention for
sustainably powering Internet of Things (IoT) electronics. Sb_2S_3 is a
promising IPV candidate material with a bandgap of 1.75 eV, which is near the
optimal value for indoor energy harvesting. However, the performance of
Sb_2S_3 solar cells is limited by nonradiative recombination, closely
associated with the poor-quality absorber films. Additive engineering is an
effective strategy to improved the properties of solution-processed films. This
work shows that the addition of monoethanolamine (MEA) into the precursor
solution allows the nucleation and growth of Sb_2S_3 films to be
controlled, enabling the deposition of high-quality Sb_2S_3 absorbers with
reduced grain boundary density, optimized band positions and increased carrier
concentration. Complemented with computations, it is revealed that the
incorporation of MEA leads to a more efficient and energetically favorable
deposition for enhanced heterogeneous nucleation on the substrate, which
increases the grain size and accelerates the deposition rate of Sb_2S_3
films. Due to suppressed carrier recombination and improved charge-carrier
transport in Sb_2S_3 absorber films, the MEA-modulated Sb_2S_3 solar
cell yields a power conversion efficiency (PCE) of 7.22
illumination, and an IPV PCE of 17.55
diode (WLED) illumination, which is the highest yet reported for Sb_2S_3
IPVs. Furthermore, we construct high performance large-area Sb_2S_3 IPV
modules to power IoT wireless sensors, and realize the long-term continuous
recording of environmental parameters under WLED illumination in an office.
This work highlights the great prospect of Sb_2S_3 photovoltaics for indoor
energy harvesting.
MoreTranslated text
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined