Co Metal ALD on Cu with Cyclic Clean by Peroxide and Hydrazine for Inverse Hybrid Metal Bonding
2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)(2024)
Abstract
To meet the demands of data-intensive applications such as artificial intelligence (AI) and high-performance computing (HPC), there is a need for tighter integration to minimize electrical interconnect delays and energy
[1]
. Typical I/O pitches for μ-bumps range from hundreds of microns to
$\sim 50\mu \mathrm{m}$
for conventional flip chip bonding therefore limiting the number of I/O's. When scaling down solder-based μ-bumps, adjacent interconnects could be shorted during the bonding process. As a result, the investigation of new bonding techniques has become more and more popular. The feasibility of a 3D bonding technology for ultra-dense input/output (I/O) interconnects using cobalt selective atomic layer deposition (Co ALD) was explored with a preliminary testbed
[2]
.
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Key words
Peroxide,Hydrazine,Sputtering,Carbide,High-performance Computing,Clean Surface,Cyclical Process,Electroplating,Grain Growth,Atomic Layer Deposition,Flip-chip,Selective Deposition
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