Franz-Keldysh Effect in Lateral pin Photodetectors of Ge Strip on Si at C-, L- and U-Band Wavelengths
2024 IEEE Silicon Photonics Conference (SiPhotonics)（2024）
Abstract
Spectral responsivity is measured for lateral pin photodetectors of a Ge strip on Si. The Franz-Keldysh effect under high reverse voltage significantly enhances the responsivity not only in the C and L bands (1.530–1.625 μm) but also in the U band (1.625–1.675 μm).
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Key words
Ge photodetector,responsivity,Franz-Keldysh effect,L band,U band
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