10Th Anniversary on the Discovery of Third Breakdown: Implications and Applications
2024 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI TSA（2024）
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10th Anniversary,Gate Dielectric,Gate Oxide,Function Of Time,Mobile Phone,Power Management,Key Generation,Drain Current,Gate Leakage,High Gate,Gate Current,Hardware Security,Leakage Path,Physical Unclonable Functions,Percolation Paths
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