High-performance flexible resistive random-access memory based on SnS₂ quantum dots with a charge trapping/de-trapping effect

Nanoscale（2024）

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Abstract

High-quality SnS2 quantum dots were successfully prepared and applied to a flexible memristor with excellent resistive transition performance.

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High-performance flexible resistive random-access memory based on SnS2 quantum dots with a charge trapping/de-trapping effect